Surface Morphology of p‐Type (100) Silicon Etched in Aqueous Alkaline Solution

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Surface Morphology of p-Type (100) Silicon Etched in Aqueous Alkaline Solution

We report on a study of the morphology of (100) silicon surfaces etched in aqueous alkaline solutions. It is shown that the formation of pyramidal hillocks during etching can be influenced in two different ways: by the presence of an oxidizing agent (ferricyanide or oxygen) in the etchant solution, or by etching under anodic bias. In both cases pyramid formation is suppressed without a signific...

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ژورنال

عنوان ژورنال: Journal of The Electrochemical Society

سال: 1996

ISSN: 0013-4651,1945-7111

DOI: 10.1149/1.1836710